Ferroelectric Nanogap‐Based Steep‐Slope Ambipolar Transistor (Small 48/2022)

A programmable ferroelectric single electron transistor

Solution-processed ambipolar vertical organic field effect transistor

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Ambipolar transport in an electrochemically gated single-molecule field-effect transistor.

Charge transport is studied in single-molecule junctions formed with a 1,7-pyrrolidine-substituted 3,4,9,10-perylenetetracarboxylic diimide (PTCDI) molecular block using an electrochemical gate. Compared to an unsubstituted-PTCDI block, spectroscopic and electrochemical measurements indicate a reduction in the highest occupied (HOMO)-lowest unoccupied (LUMO) molecular orbital energy gap associa...

Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

Light emitting field-effect transistors LEFETs were fabricated with a low work function metal calcium and a high work function metal gold as the source and drain electrodes. The gold electrode serves as the source for holes into the band and the drain for electrons from the * band; the calcium electrode serves as the source for electrons into the * band and the drain for holes from the band. Fo...

Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7 nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance devi...